Green
Product
STU/D802S
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
80V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-252 and TO-251 Package.
I
D
25A
R
DS(ON)
(m
Ω
) Max
35
@
VGS=10V
50
@
VGS=4.5V
D
D
G
S
G
D
S
G
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
MAXIMUM RATINGS (
T
C
=25
°
C unless otherwise noted
)
Parameter
Limit
Drain-Source Voltage
80
Gate-Source Voltage
±20
a
Drain Current-Continuous
T
A=
25 °C
25
-Pulsed
Avalanche Energy
c
Maximum Power Dissipation
a
b
Units
V
V
A
A
mJ
W
°C
100
196
T
A=
25 °C
62.5
-55 to 150
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
2
50
°C/W
°C/W
Mar,31,2010
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
