STU/D412S
Ver 1.0
60
50
20. 0
Is, Source-drain current(A)
I
D
=
11A
75C
125C
30
20
10
0
25C
10. 0
R
DS(on)
(m
Ω
)
40
25C
125C
75C
0
2
4
6
8
10
1. 0
0. 4
0. 6
0. 8
1. 0
1. 2
1. 4
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
600
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage(V)
500
C, Capacitance(pF)
C
iss
400
300
200
C ss
o
100
C
rss
0
0
5
10
15
20
25
30
8
6
4
2
0
0
V
DS
=20V
I
D
=11A
1
2
3
4
5
6
7
8
9
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
600
300
100
Switching Time(ns)
100
60
TD( of f )
I
D
, Drain Current(A)
Tr
TD( on)
Tf
10
R
D
O
S
(
L
N)
im
it
1m
DC
10
0u
s
10
s
ms
10
VD 20V, I D 1A
S=
=
VG 10V
S=
1
1
1
6 10
60 100
300 600
0.1
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10
40
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Aug,07,2008
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
