STU/D3055L2
SamHop Microelectronics Corp.
Feb.01 2005 ver1.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
20V
FEATURES
(m
W
)
I
D
18A
R
DS(ON)
Max
Super high dense cell design for low R
DS(ON
).
40 @ V
GS
= 10V
45 @ V
GS
= 4.5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
G
D
S
G
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (T
C
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
a
-Pulsed
@T
C
=25 C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
20
12
18
30
15
50
-55 to 175
Unit
V
V
A
A
A
W
C
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
C /W
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
