STU/D3055L2-60
SamHop Microelectronics Corp.
Nov 26 , 2004 Ver1.2
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
20V
FEATURES
( m
Ω
) Max
I
D
14A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
65 @ V
GS
= 4.5V
90 @ V
GS
= 2.5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
G
D
S
G
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
a
Drain Current-Continuous @T
J
=125 C
b
-Pulsed
(300ms Pulse Width)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
20
12
14
23
10
50
-55 to 150
Unit
V
V
A
A
A
W
C
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
a
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
R
JC
R
JA
3
50
C /W
C /W