S T U/D3030NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
a
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 20A
V
GS
=4.5V, I
D
= 12A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 20A
Min Typ
C
Max Unit
30
1
V
uA
100 nA
1
1.7
13
18
50
25
830
180
120
3
11
16
35
10
17
9
1.8
5
3
18
V
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
b
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
25
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DS
=15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= 15V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=20A,V
GS
=10V
V
DS
=15V, I
D
=20A,V
GS
=4.5V
ohm
S WITCHING CHAR ACTE R IS TICS
b
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=15V, I
D
= 20A
V
GS
=10V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
