S T U/D2555NL
N-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 44V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
=10V, I
D
= 8A
V
GS
=4.5V, I
D
= 4A
V
DS
= 5V, V
GS
= 10V
V
DS
= 5V, I
D
= 8A
Min Typ
C
Max Unit
55
1
V
uA
100 nA
1.4
1.8
28
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
2.5
43
58
V
m ohm
m ohm
42
35
11
928
99
60
3
8
18
26.9
16.6
7.7
2.9
3.3
A
S
1100
113
70
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
c
V
DS
=30V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= 30V
I
D
= 1 A
V
GS
= 10V
R
GE N
= 6 ohm
V
DS
=15V, I
D
=8A,V
GS
=10V
V
DS
=15V, I
D
=8A,V
GS
=4.5V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
9.5
21
30.9
19
9.1
3.4
4.3
ns
ns
ns
ns
nC
nC
nC
nC
11.2 13.1
V
DS
=15V, I
D
= 8A
V
GS
=10V
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
