S T U/D1855P L
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
S ymbol
Condition
Min Typ Max Unit
-0.9 -1.3
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Diode Forward Voltage
V
GS
= 0V, Is =-10A
V
SD
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
-V
G S
=10V
20
-V
G S
=4V
15
-V
G S
=4.5V
-V
G S
=8V
-I
D
, Drain C urrent(A)
-I
D
, Drain C urrent (A)
16
12
10
8
4
0
5
T j=125 C
1
0
25 C
-55 C
2.4
3.2
4.0
4.8
-V
G S
=3V
0
0.5
1
1.5
2
2.5
3
0
0.8
1.6
-V
DS
, Drain-to-S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1200
1000
2.2
F igure 2. Trans fer C haracteris tics
V
G S
=-10V
I
D
=-10A
C , C apacitance (pF )
C is s
800
600
400
200
0
C rs s
0
5
10
15
20
25
30
C os s
R
DS (ON)
, On-R es is tance
Normalized
1.8
1.4
1.0
0.6
0.2
0
-50
-25
0
25
50
75
100
125
-V
DS
, Drain-to S ource Voltage (V )
T J , J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
