STB/P8444
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-220 and TO-263 Package.
I
D
80A
R
DS(ON)
(m
Ω
) Max
4.8
@
VGS=10V
D
D
G
S
G
D
S
G
STP SERIES
TO-220
STB SERIES
TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
40
±20
T
C
=25°C
80
264
306
T
C
=25°C
62
-55 to 150
Units
V
V
A
A
mJ
W
°C
Sigle Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
1.8
62.5
°C/W
°C/W
Details are subject to change without notice.
Mar,26,2008
1
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
