S TU/D420S
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
a
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
0.84
1.3
V
S D
V G S = 0V, Is = 8A
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
30
15
VG S =4.5
Tj=125 C
25
12
9
VG S =4V
VG S =10V
20
VG S =8V
25 C
15
VG S =3.5V
6
3
0
10
VG S =3V
5
-55 C
3.5
0
4.2
0
0.7
1.4
2.1
2.8
0.5
1.5
2
3
1
2.5
0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
1.75
1.60
1.45
1.30
1.15
1.0
36
30
24
VG S =4.5V
V
G S =10V
=10A
I
D
18
12
VG S =10V
V
G S =4.5V
=8A
6
0
I
D
0.8
0
-25
6
12
18
24
30
0
150
100 125
25
50
75
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
