S DU/D50N03L
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
I
D
=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
60
V
DS
=10V
F igure 6. B reakdown V oltage V ariation
with T emperature
40
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
50
40
30
20
10
0
0
5
10
15
20
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
300
200
100
R
(O
DS
L
N)
im
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=10V
I
D
=50A
it
10
10
DC
1m
ms
s
10
0m
1s
s
1
0.5
0.1
V
G S
=10V
S ingle P ulse
T c=25 C
8
16
24
32
40
48
56
64
1
10
30
60
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
