SDU/D02N60A
Preliminary
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
TBD
20
100
-100
V/
°
C
uA
nA
nA
OFF CHARACTERISTICS
V
(BR)DSS
Drain-Source Breakdown Voltage
V
(BR)DSS
Breakdown Voltage Temperature
Coefficient
/ T
J
I
DSS
Drain-to-Source Leakage Current
I
GSSF
I
GSSR
V
GS
=0V , I
D
=250uA
600
Reference to 25
°
C,
I
D
=250uA
V
DS
=600V , V
GS
=0V
Gate-Body Leakage Current, Forward V
DS
=0V , V
GS
=30V
Gate-Body Leakage Current, Reverse V
DS
=0V , V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
g
FS
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=1A
d
V
DS
=15V , I
D
=1A
d
2.0
4.0
4.4
10
V
ohm
S
pF
pF
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain("Miller") Charge
V
DS
=25V,V
GS
=0V
f=1.0MHz
240
35
3
V
DD
=300V
I
D
=2A
R
G
=10 ohm,R
D
=150 ohm
V
GS
=10V
d
V
DS
=300V,I
D
=2A,
V
GS
=10V
d
13
38
24
51
8.8
12.1
5.1
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Source Current(Body Diode)
I
SM
V
SD
Notes :
a. Repetitive Rating Pulse width limited by maximum junction temperature.
b. VDD=50V, starting T
J
=25
°
C,L=53mH, R
G
=25
Ω
, I
AS
=2A
c. I
SD
< 2A, di/dt < 100A/us, V
DD
< V
(BR)DSS
, T
J
< 150
°
C
d. Pulse Test Pulse width < 300us, Duty cycle < 2%.
Maximum Pulsed Source Current(Body Diode)
Drain-Source Diode Forward Voltage V
GS
=0V,I
S
=1A
d
2
8
1.5
A
A
V
Jul,22,2009
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
