S DT 452AP
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=-250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
I
D
=-250uA
5
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
15
F igure 6. B reakdown V oltage V ariation
with T emperature
20.0
V
G S
=0V
g
F S
, T rans conductance (S )
-Is , S ource-drain current (A)
20
12
9
6
3
V
DS
=-15V
0
0
5
10
15
10.0
1.0
0.4
0.6
0.7
0.9
1.1
1.3
-I
DS
, Drain-S ource C urrent (A)
-V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
-I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=-15V
I
D
=-5.3A
10
R
DS
(
)
ON
L im
it
10
1s
DC
10
ms
0m
s
1
0.1
0.03
V
G S
=-10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
2
4
6
8
10
12
14
16
Qg, T otal G ate C harge (nC )
-V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
