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SDP75N03L 参数 Datasheet PDF下载

SDP75N03L图片预览
型号: SDP75N03L
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑E级nhancement模式场效应晶体管 [N-Channel Logic Level E nhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 6 页 / 494 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S DP /B 75N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =37A
Min Typ Max Unit
0.93 1.3
V
4
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
40
35
V
G S
=10,9,8,7,6,5,4V
20
25
25 C
I
D
, Drain C urrent(A)
25
20
15
10
5
0
0
1
2
3
4
5
6
V
G S
=3V
I
D
, Drain C urrent (A)
30
15
10
-55 C
5
T
J
=125 C
0
0
1
2
3
4
5
6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
6000
F igure 2. Trans fer C haracteris tics
2.2
V
G S
=10V
I
D
=37A
R
DS (ON)
, Normalized
Drain-S ource On-R es is tance
5000
1.8
1.4
1.0
0.6
0.2
0
C , C apacitance (pF )
4000
3000
2000
1000
0
0
5
10
15
20
25
30
C is s
C os s
C rs s
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3