S DM4884
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.09
1.06
1.03
1.00
0.97
0.94
0.91
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125 150
ID=-250uA
5
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation
with T emperature
25
F igure 6. B reakdown V oltage V ariation
with T emperature
40.0
g
F S
, T rans conductance (S )
Is , S ource-drain current (A)
20
20
15
10
5
0
0
5
10
V
DS
=15V
15
10.0
1.0
0.4
0.6
0.8
1.0
1.2
1.4
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
10
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
L im
it
V
G S
, G ate to S ource V oltage (V )
8
6
4
2
0
0
V
DS
=15V
I
D
=15A
10
R
D
S
(
)
ON
10m
100
ms
s
11
DC
1s
0.1
0.03
V
G S
=10V
S ingle P ulse
T
A
=25 C
0.1
1
10
30 50
7 14
21
28
35
42
49 56
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
4
F igure 10. Maximum S afe
O perating Area
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
