Green
Product
SDP/F06N60A
Preliminary
S a mHop Microelectronics C orp.
600V N-Channel Planar MOSFET
PRODUCT SUMMARY
V
DSS
600V
FEATURES
Fast Switching.
100% Avalanche Rated.
I
D
6A
R
DS(ON)
(m
Ω
) Max
1.2
@
VGS=10V,ID=3A
G D S
TO-220
G D S
TO-220F
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
dv/dt
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Curren
Pulsed Drain Current, V
GS
=10V
Peak Diode Recovery Energy
Power Dissipation
Linear Derating Factor
c
a
SDP06N60A
600
±30
T
C
=25°C
T
C
=100°C
6
3.8
24
360
4.5
T
C
=25°C
T
C
>25°C
104
0.83
SDF06N60A
Units
V
V
6*
3.8 *
24 *
A
A
A
mJ
V/ns
W
W/°C
Single Pulse Avalanche Energy
b
Operating and Storage Temperature Range
-55 to 150
°C
* Drain current limited by maximum junction temperature
THERMAL CHARACTERISTICS
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SDP06N60A
1.2
62.5
SDF06N60A
3.0
62.5
Units
°C/W
°C/W
Details are subject to change without notice.
Jul,22,2009
1
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
