S DU/D9916
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.72 1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t
＜
10sec.
b.Pulse Test:Pulse Width
＜
300us, Duty Cycle
＜
2%.
c.Guaranteed by design, not subject to production testing.
25
V
G S
=10,9,8,7,6,5,4V
20
20
25
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
15
15
10
V
G S
=3V
5
0
10
T j=125 C
5
-55 C
0
0.0
25 C
0
0.5
1
1.5
2
2.5
3
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R
DS (ON)
, On-R es is tance(Ohms )
(Normalized)
1800
1500
1.8
1.6
1.4
1.2
1.0
0.8
F igure 2. Trans fer C haracteris tics
V
G S
=4.5V
I
D
=6A
C , C apacitance (pF )
1200
900
600
300
0
0
5
10
15
20
C is s
C os s
C rs s
0.6
-50
0
50
100
150
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
