S DU/D50N03L
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
V
V
V
G S = 0V, I
DS = 24V, VGS = 0V
20V, VDS = 0V
D
= 250uA
Drain-S ource Breakdown Voltage
30
V
BVDS S
uA
nA
I
I
DS S
G S S
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
10
G S
=
100
a
ON C HAR AC TE R IS TIC S
V
G S (th)
1
1.5
7
3
8
V
G ate Threshold Voltage
V
V
DS = VG S , I
D
= 250uA
=25A
G S = 10V, I
D
m ohm
m ohm
R
DS (ON)
Drain-S ource On-S tate R esistance
V
G S = 4.5V, I
D
= 20A
10
12
V
V
DS = 10V, VG S = 10V
= 25A
On-S tate Drain C urrent
I
D(ON)
A
S
50
gFS
Forward Transconductance
DS = 10V, I
D
25
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
1750
950
C
IS S
V
DD =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f = 1.0MH
Z
R everse Transfer C apacitance
330
S WITC HING C HAR AC TE R IS TIC S b
Turn-On Delay Time
t
D(ON)
ns
ns
ns
ns
nC
72
24
V
DD = 15V,
=1A,
G S = 10V,
G E N = 6 ohm
I
D
R ise Time
tr
V
R
Turn-Off Delay Time
Fall time
tD(OFF)
14
8
tf
V
V
DS = 10V, I
DS = 10V, I
D
D
= 50A,VG S =10V
= 50A,VG S =4.5V
61.5
30.2
10.3
9.7
Q
g
Total G ate C harge
nC
nC
nC
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
V
V
DS = 10V, I
G S =10V
D
= 50A,
gd
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
