SDU/D20N03L
SamHop Microelectronics Corp.
July 2004 ver1.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
30V
FEATURES
(m
W
)
I
D
35A
R
DS(ON)
Max
Super high dense cell design for low R
DS(ON
).
15 @ V
GS
= 10V
32 @ V
GS
= 4.5V
Rugged and reliable.
TO-252 and TO-251 Package.
D
D
G
S
G
D
S
G
SDU SERIES
TO-252AA(D-PAK)
SDD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (T
C
=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @TJ=125 C
-Pulsed
a
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Limit
30
20
35
87
20
50
-55 to 175
Unit
V
V
A
A
A
W
C
Drain-Source Diode Forward Current
Maximum Power Dissipation
@Tc=25 C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
R
JC
R
JA
3
50
C /W
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
