S DP /B 65N03L
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
4
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =26A
Min Typ Max Unit
0.9
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
80
V
G S
=10,9,8,7,6,5V
70
20
25
25 C
T
J
=125 C
I
D
, Drain C urrent(A)
60
50
40
30
20
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
G S
=3V
V
G S
=4V
I
D
, Drain C urrent (A)
15
-55 C
10
5
0
1
2
3
4
5
6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
3600
F igure 2. Trans fer C haracteris tics
2.2
V
G S
=10V
I
D
=26A
R
DS (ON)
, Normalized
Drain-S ource On-R es is tance
3000
1.8
1.4
1.0
0.6
0.2
0
C , C apacitance (pF )
2400
1800
C is s
1200
600
0
0
5
10
15
20
25
30
C os s
C rs s
-50
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
