SM7501NF
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
T
J
T
STG
I
S
I
DP
I
D
P
D
R
θJC
E
AS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300µs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Avalanche Energy, Single Pulsed
L=2mH
T
C
=25°C
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
Rating
75
±25
175
-55 to 175
40
300*
80
75
273
136
0.55
1
W
°C/W
J
V
°C
°C
A
A
A
Unit
Common Ratings
(T
A
=25°C Unless Otherwise Noted)
Mounted on Large Heat Sink
Drain-Source Avalanche Ratings
Note：*Pulse width limited by safe operating area.
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
t
rr
Q
rr
a
a
(T
A
= 25°C Unless Otherwise Noted)
Parameter
Test Conditions
SM7501NF
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
=60V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=40A
I
SD
=20A, V
GS
=0V
I
DS
=40A, dl
SD
/dt=100A/µs
75
-
-
2
-
-
-
-
-
3
-
9
-
1
30
4
±100
11
V
µA
V
nA
mΩ
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
-
-
0.8
55
117
1.1
-
-
V
ns
nC
Copyright
©
Sinopower Semiconductor, Inc.
Rev. A.2 - May., 2009
2
www.sinopowersemi.com
SAMES [ SAMES ]
