SA2002H
ELECTRICAL CHARACTERISTICS
(VDD - VSS = 5V ± 10%, over the temperature range -40°C to +85°C, unless otherwise specified.)
Parameter
General
Symbol
Min
Typ
Max
Unit
Condition
Supply Voltage:
Positive
VDD
VSS
IDD
2.25
2.5
-2.5
3
2.75
-2.25
5
V
V
With respect to AGND
With respect to AGND
Supply Voltage:
Negative
-2.75
Supply Current:
Positive
mA
mA
Supply Current:
Negative
ISS
-3
-5
Analog Inputs
Current Sensor Inputs
(Differential)
Input Current Range
IRIIP, IRIIN
-25
-4
25
4
μA
Peak value
With R = 4.7k connected
to AGND
Offset Voltage
VOIIP, VOIIN
mV
Voltage Sensor Inputs
(Asymmetrical)
Input Current Range
IRIVP
-25
-4
25
4
μA
Peak value
With R = 4.7k connected
to AGND
Offset Voltage
VOIVP
mV
Digital Outputs
FOUT, FMO, DIR
Output High Voltage
Output Low Voltage
VOH
VOL
VDD-1
V
V
ISOURCE = 5mA
ISINK = 5mA
VSS+1
Pulse Rate FOUT
Pulse Width FOUT
fp
1160
Hz
At rated input conditions
tpp
tpn
71
143
μs
μs
Positive energy flow
Negative energy flow
On-chip Voltage Reference
Reference Voltage
VR
-IR
1.1
45
1.3
55
70
V
μA
With R = 24k connected
to VSS
Reference Current
50
10
Temperature Coefficient
On-chip Oscillator
TCR
ppm/ºC
Oscillator Frequency
Temperature Coefficient
fOSC
3.15
3.57
70
4.00
200
MHz
TCOSC
ppm/ºC
ATTENTION:
Electrostatic
sensitive device.
Requires special
handling.
During manufacturing, testing and shipment we take great care to protect our products against potential external
environmental damage such as Electrostatic Discharge (ESD). Although our products have ESD protection circuitry,
permanent damage may occur on products subjected to high-energy electrostatic discharges accumulated on the
human body and/or test equipment that can discharge without detection. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality during product handling.
SPEC-3116 (REV. 9)
29-09-2017
2/11
SAMES [ SAMES ]
