D2022UK
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
V
GS
= 0
V
DS
= 28V
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 45W
V
DS
= 28V
f = 500MHz
I
DQ
= 0.5A
I
D
= 10mA
V
GS
= 0
V
DS
= 0
V
DS
= V
GS
I
D
= 1A
1
0.9
13
40
20:1
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
65
Typ.
Max. Unit
V
1
1
7
mA
μA
V
S
dB
%
—
60
30
2.5
pF
pF
pF
TOTAL DEVICE
PER SIDE
V
DS
= 28V
V
DS
= 28V
Reverse Transfer Capacitance V
DS
= 28V
* Pulse Test:
Pulse Duration = 300
μs
, Duty Cycle
≤
2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 1.4°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3827
Issue 1
SAMES [ SAMES ]
