2N7336
IRFG6110
ELECTRICAL CHARACTERISTICS FOR N-CHANNEL (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = 1mA
100
V
DSS
GS
D
∆BV
∆T
Reference to 25°C
DSS
0.13
V/°C
I = 1mA
J
D
Static Drain – Source On–State
Resistance
V
V
V
V
V
= 10V
= 10V
I = 0.6A
0.70
Ω
GS
GS
DS
DS
GS
D
R
DS(on)
I = 1A
0.80
D
V
g
Gate Threshold Voltage
Forward Transconductance
= V
I = 250µA
2
4
V
GS(th)
GS
D
(Ω)
≥ 15V
I
= 0.60A
DS
0.86
S(Ω
fs
= 0
V
= 0.8V
25
250
100
–100
DS
DSS
I
µA
Zero Gate Voltage Drain Current
DSS
T = 125°C
J
I
I
V
V
= 20V
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
GSS
GS
nA
= –20V
GSS
GS
C
C
C
V
V
= 0
180
82
iss
GS
DS
= 25V
pF
nC
Output Capacitance
oss
rss
f = 1MHz
15
Reverse Transfer Capacitance
Total Gate Charge
Q
Q
Q
t
V
V
= 10V
I = 1A
15
7.5
7.5
20
25
40
40
g
GS
DS
D
= 0.5V
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
gs
gd
DS
d(on)
V
= 50V
DD
t
t
t
r
I = 1A
ns
D
Turn–Off Delay Time
Fall Time
d(off)
f
R = 24Ω
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
1
4
Continuous Source Current
S
A
V
2
Pulse Source Current
SM
I = 1.0A
T = 25°C
S
J
1
V
t
1.5
Diode Forward Voltage
SD
V
= 0
GS
I = 1A
T = 25°C
200
ns
Reverse Recovery Time
rr
F
J
Q
t
d / d ≤ 100A/µs V ≤ 50V
0.83
µC
Reverse Recovery Charge
Forward Turn–On Time
rr
i
t
DD
Negligible
on
PACKAGE CHARACTERISTICS
L
L
Internal Drain Inductance (from centre of drain pad to die)
Internal Source Inductance (from centre of source pad to end of source bond wire)
4.0
6.0
D
nH
S
Notes
1) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
4/99
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
SAMES [ SAMES ]
