RUD2H20Q2
Ultral Fast Recovery Diode
MOSFET
Features
•
V
RRM
=
Pin Description
200V
I
F(AV)
=2x 10A
•
Ultra Fast Recovery Time
• High Surge Capability
• Low Leakage Current
•
Low Forward Voltage Drop
•
Avalanche Rated
• Lead Free and Green Devices Available
TO-3P
Applications
• High Speed Power Switching
Fast Recovery Diode
Absolute Maximum Ratings
Symbol
Parameter
Rating
200
200
20
10
100
-55 to 150
150
V
A
A
A
°C
°C
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
RRM
V
R
I
F(AV)
I
FSM
T
STG
T
J
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current, per Device
T
C
=130°C
per Diode
Peak Forward Surge Current,10mS Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
R
θJC
Thermal Resistance-Junction to Case per Diode
1.5
°C/W
Avalanche Ratings
E
AS
①
Avalanche Energy, Single Pulsed
64
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
