Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU8205C6
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
20
VDS=20V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
0.5
0.7
1.5
IGSS
Gate Leakage Current
VGS=±10V, VDS=0V
nA
±100
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5A
22
30
30
40
mW
mW
③
Drain-Source On-state Resistance
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=1A, VGS=0V
1
V
VSD
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.8
580
120
95
Input Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
5
VDD=10V, RL=1.7W,
IDS=6A, VGEN=4.5V,
RG=6W
11
ns
38
13
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
10
1.5
3.4
14
VDS=16V, VGS=4.5V,
IDS=6A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t £10sec.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
