Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU75N08
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
V
VGS=0V, IDS=250mA
75
VDS= 75V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
30
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
②
V
VDS=VGS, IDS=250mA
2
3
8
4
VGS=±25V, VDS=0V
nA
±100
11
Drain-Source On-state Resistance VGS= 10V, IDS=40A
mW
RDS(ON)
Diode Characteristics
②
Diode Forward Voltage
ISD=20 A, VGS=0V
1.2
V
VSD
trr
0.83
50
Reverse Recovery Time
ns
nC
ISD=40A, dlSD/dt=100A/ms
qrr
Reverse Recovery Charge
③
110
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.4
3400
450
170
22
Input Capacitance
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics
40
20
VDD=35V, RL=35W,
IDS= 1A, VGEN= 10V,
RG=7W
11
ns
70
130
120
62
③
Qg
Qgs
Qgd
Total Gate Charge
75
18
25
110
VDS=60V, VGS= 10V,
IDS=80A
nC
Gate-Source Charge
Gate-Drain Charge
Notes: ①Current limited by Safe operating area.
②Pulse test ; Pulse width£300ms, duty cycle£2%.
③Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev.C – MAR., 2009
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RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
