RU7088R
Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU7088R
Typ.
Symbol
Parameter
Test Condition
Unit
Min.
Max.
Static Characteristics
VGS=0V, IDS=250µA
VDS=70V, VGS=0V
BVDSS
Drain-Source Breakdown Voltage
70
V
1
IDSS
Zero Gate Voltage Drain Current
µA
30
TJ=125°C
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=40A
VGS(th)
IGSS
Gate Threshold Voltage
2
3
4
±100
8
V
Gate Leakage Current
nA
mΩ
④
RDS(ON)
Drain-Source On-state Resistance
6.5
Diode Characteristics
④
ISD=20A, VGS=0V
Diode Forward Voltage
1.2
V
VSD
trr
Reverse Recovery Time
50
95
ns
nC
ISD=40A, dlSD/dt=100A/µs
Qrr
Reverse Recovery Charge
⑤
Dynamic Characteristics
VGS=0V,VDS=0V,F=1MHz
RG
Ciss
Coss
Crss
td(ON)
tr
Gate Resistance
1.4
3100
440
260
18
Ω
VGS=0V,
VDS=30V,
Frequency=1.0MHz
Input Capacitance
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
VDD=30V, RL=0.8Ω,
IDS=40A, VGEN=10V,
RG=8Ω
15
ns
td(OFF)
tf
63
Turn-off Fall Time
33
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
75
14
25
VDS=30V, VGS=10V,
IDS=40A
nC
①Pulse width limited by safe operating area.
Notes:
②Calculated continuous current based on maximum allowable junction temperature. The package
limitation current is 75A.
③Limited by TJmax, IAS =30A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
④Pulse test;Pulse width≤300µs, duty cycle≤2%.
⑤Guaranteed by design, not subject to production testing.
Ruichips Semiconductor Co., Ltd
Rev. E– DEC., 2012
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
