RU6Z8R
N-Channel Advanced Power MOSFET
Features
• 650V/8A,
R
DS (ON)
=0.9Ω (Typ.)@V
GS
=10V
•
Super High Dense Cell Design
•
Fast Switching
•
100% avalanche tested
• Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
TO-220
Applications
• High efficiency switch mode power
supplies
•
Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
T
C
=25°C
Rating
650
±30
150
-55 to 150
8
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
32
②
A
A
W
W
°C/W
8
5.2
59
①
P
D
R
θJC
③
147
0.85
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
211
mJ
Copyright Ruichips Semiconductor Co., Ltd
Rev. B– DEC., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
