RU6H9R
N-Channel Advanced Power MOSFET
MOSFET
Features
• 600V/9.5A,
R
DS (ON)
=
0.7Ω
(Typ.)
@
V
GS
=10V
•
Gate charge minimized
•
Low Crss( Typ. 20pF)
• Extremely high dv/dt capability
•
100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-220
Applications
•
High efficiency switch mode power
supplies
•
Lighting
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
600
±30
150
-55 to 150
T
C
=25°C
9.5
①
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
T
STG
I
S
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
V
°C
°C
A
Mounted on Large Heat Sink
I
DP
I
D
300μs Pulse Drain Current Tested
Continuous Drain Current(V
GS
=10V)
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
38
②
①
A
A
W
W
°C/W
9.5
6.2
62
0.8
P
D
R
θJC
③
156
Maximum Power Dissipation
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
E
AS
Avalanche Energy, Single Pulsed
10
mJ
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Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2012