Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU6H11R
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
600
VDS=600V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±30V, VDS=0V
nA
±100
③
Drain-Source On-state Resistance VGS=10V, IDS=5A
0.75 0.85
W
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=10A, VGS=0V
1.3
320
V
VSD
trr
Reverse Recovery Time
ns
mC
ISD=10A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
2.8
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
10
1160
195
12
Input Capacitance
VGS=0V,
VDS=300V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
35
VDD=300V, RL=30W,
IDS=10A, VGEN=10V,
RG=25W
85
ns
70
65
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
32
8
VDS=480V, VGS=10V,
IDS=10A
nC
Gate-Source Charge
Gate-Drain Charge
16
Notes: ①Current limited by maximum junction temperature.
②Limited by TJmax, IAS =3.5A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A – JUL., 2012
www.ruichips.com