Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU6888
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
68
VDS= 68V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
6
4
±100
8
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
nA
②
Drain-Source On-state Resistance VGS= 10V, IDS=35A
mW
RDS(ON)
Diode Characteristics
②
Diode Forward Voltage
ISD=20 A, VGS=0V
0.84
49
V
VSD
trr
Reverse Recovery Time
ns
ISD=40A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
93
③
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.4
2900
340
200
13
Input Capacitance
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=30V, RL=30W,
IDS= 1A, VGEN= 10V,
RG=8W
15
ns
29
55
③
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
65
12
21
VDS=30V, VGS= 10V,
IDS=40A
nC
Gate-Source Charge
Gate-Drain Charge
Notes: ①Current limited by wire bond.
②Pulse test ; Pulse width£300ms, duty cycle£2%.
③Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A – SEP., 2009
www.ruichips.com
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