Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU6580R
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
65
VDS= 65V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
nA
±100
④
Drain-Source On-state Resistance VGS= 10V, IDS=40A
7.5
9
mW
RDS(ON)
Diode Characteristics
④
Diode Forward Voltage
ISD=40A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
106
52
ns
ISD=40A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.8
1800
380
140
15
Input Capacitance
VGS=0V,
VDS= 32V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=32V, RL=0.8W,
IDS=40A, VGEN= 10V,
RG=6W
94
ns
46
32
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
50
12
19
VDS=52V, VGS= 10V,
IDS=40A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Calculated continuous current based on maximum allowable junction temperature. Limited by bond wire.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =27A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
