Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU6050L
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
60
VDS= 60V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
nA
±100
④
Drain-Source On-state Resistance VGS=10V, IDS=50A
10
14
mW
RDS(ON)
Diode Characteristics
④
Diode Forward Voltage
ISD=50A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
32
39
ns
ISD=50A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.6
1670
340
145
10
Input Capacitance
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=30V, RL=0.6W,
IDS=50A, VGEN=10V,
RG=4.7W
86
ns
34
26
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
25
9
VDS=48V, VGS=10V,
IDS=50A
nC
Gate-Source Charge
Gate-Drain Charge
8
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =20A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2011
www.ruichips.com