Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU5H8P
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
500
VDS= 500V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±30V, VDS=0V
nA
±100
0.85
③
Drain-Source On-state Resistance VGS= 10V, IDS=4A
0.7
W
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=8A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
310
2.3
ns
mC
ISD=8A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
10
1110
195
26
Input Capacitance
VGS=0V,
VDS= 250V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
30
VDD=250V, RL=32W,
IDS=8A, VGEN= 10V,
RG=25W
50
ns
120
50
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
25
4
VDS=400V, VGS= 10V,
IDS=8A
nC
Gate-Source Charge
Gate-Drain Charge
10
Notes: ①Current limited by maximum junction temperature.
②Limited by TJmax, IAS =14A, VDD = 100V, RG = 50Ω , Starting TJ = 25°C.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A – FEB., 2012
www.ruichips.com
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