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RU40P4H 参数 Datasheet PDF下载

RU40P4H图片预览
型号: RU40P4H
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道先进的功率MOSFET [P-Channel Advanced Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 294 K
品牌: RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
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RU40P4H  
Electrical Characteristics (TA=25°C Unless Otherwise Noted)  
RU40P4H  
Symbol  
Parameter  
Test Condition  
Unit  
Min. Typ. Max.  
Static Characteristics  
BVDSS Drain-Source Breakdown Voltage  
IDSS Zero Gate Voltage Drain Current  
VGS(th) Gate Threshold Voltage  
V
VGS=0V, IDS=-250mA  
-40  
VDS=-40V, VGS=0V  
-1  
mA  
TJ=85°C  
-30  
V
VDS=VGS, IDS=-250mA  
-1  
-1.8  
-2.5  
IGSS  
Gate Leakage Current  
VGS=±20V, VDS=0V  
nA  
±100  
VGS=-10V, IDS=-4.2A  
VGS=-4.5V, IDS=-2A  
60  
80  
70  
mW  
mW  
Drain-Source On-state Resistance  
RDS(ON)  
105  
Diode Characteristics  
Diode Forward Voltage  
ISD=-2A, VGS=0V  
-1  
V
VSD  
trr  
Reverse Recovery Time  
13  
8
ns  
ISD=-4.5A, dlSD/dt=100A/ms  
Qrr  
Reverse Recovery Charge  
nC  
Dynamic Characteristics  
RG  
Ciss  
Coss  
Crss  
Gate Resistance  
VGS=0V,VDS=0V,F=1MHz  
W
1.2  
560  
95  
55  
8
Input Capacitance  
VGS=0V,  
VDS=-20V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
td(ON) Turn-on Delay Time  
tr Turn-on Rise Time  
td(OFF) Turn-off Delay Time  
tf Turn-off Fall Time  
VDD=-20V, RL=4.4W,  
IDS=-4.5A, VGEN=-10V,  
RG=6W  
11  
27  
12  
ns  
Gate Charge Characteristics  
Qg  
Qgs  
Qgd  
Total Gate Charge  
14  
3
18  
VDS=-32V, VGS=-10V,  
IDS=-4.5A  
nC  
Gate-Source Charge  
Gate-Drain Charge  
4
Notes:  
Pulse width limited by safe operating area.  
When mounted on 1 inch square copper board, t £10sec. The value in any given application depends on  
the user's specific board design.  
Pulse test ; Pulse width£300ms, duty cycle£2%.  
Guaranteed by design, not subject to production testing.  
2
CopyrightÓ Ruichips Semiconductor Co., Ltd  
Rev. B– MAY., 2011  
www.ruichips.com