RU4099
Electrical Characteristics
Parameter
Static Characteristics
BV
DSS
(T
A
=25°C Unless Otherwise Noted)
RU4099
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
V
GS
=0V, I
DS
=250µA
V
DS
= 40V, V
GS
=0V
T
J
=85°C
40
1
30
2
3
4
±100
2.8
3.5
V
µA
V
nA
mΩ
Symbol
Zero Gate Voltage Drain Current
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
Diode Characteristics
V
SD
t
rr
q
rr
③
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40 A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
0.77
74
148
1.2
V
ns
nC
Reverse Recovery Charge
④
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.4
5750
1400
480
21
40
69
Ω
pF
V
DD
=35V, R
L
=35Ω,
I
DS
= 1A, V
GEN
= 10V,
R
G
=6Ω
37
75
115
ns
136
208
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Pulse
width limited by safe operating area.
②Current
limited by package( Limitation Current is 75A )
③Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
154
V
DS
=30V, V
GS
= 10V,
I
DS
=40A
44
47
218
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev.B –JUN., 2010
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
