RU3710
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
②
(T
A
=25°C Unless Otherwise Noted)
RU3710
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
100
1
30
2
3
4
±100
14
16
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
q
rr
②
Diode Forward Voltage
Reverse Recovery Time
I
SD
=40 A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
0.8
90
180
1.3
V
ns
nC
Reverse Recovery Charge
③
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
③
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.5
3600
510
210
13
25
50
Ω
pF
V
DD
=35V, R
L
=35Ω,
I
DS
= 1A, V
GEN
= 10V,
R
G
=6Ω
25
72
80
ns
130
150
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
①Current
limited by wire bond.
②Pulse
test ; Pulse width≤300
µ
s, duty cycle≤2%.
③Guaranteed
by design, not subject to production testing.
85
V
DS
=80V, V
GS
= 10V,
I
DS
=80A
20
30
120
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C –JAN., 2009
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
