RU30L15H
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
A
=25°C Unless Otherwise Noted)
RU30L15H
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
=-30V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±20V, V
DS
=0V
V
GS
=-10V, I
DS
=-14A
V
GS
=-4.5V, I
DS
=-10A
-30
-1
-30
-1
-1.8
-2.5
±10
13
22
15
28
V
µA
V
µA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=-1A, V
GS
=0V
I
SD
=-14A, dl
SD
/dt=100A/µs
30
24
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=-15V,
Frequency=1.0MHz
1.5
2300
250
160
12
V
DD
=-15V, R
L
=30Ω,
I
DS
=-14A, V
GEN
=-10V,
R
G
=6Ω
20
38
18
-1
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=-24V, V
GS
=-10V,
I
DS
=-14A
39
8
12
50
nC
Pulse width limited by safe operating area.
②When
mounted on 1 inch square copper board, t
≤10sec.
The value in any given application depends on
the user's specific board design.
③Pulse
test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed
by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B– APR., 2011
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
