Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU2HE2D
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
200
VDS= 200V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±16V, VDS=0V
mA
±10
1.2
VGS= 10V, IDS=1A
0.95
1
W
W
③
Drain-Source On-state Resistance
RDS(ON)
VGS= 4.5V, IDS=0.6A
1.5
Diode Characteristics
③
Diode Forward Voltage
ISD=1A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
52
80
ns
ISD=1A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.2
360
42
24
8
Input Capacitance
VGS=0V,
VDS=100V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=100V, RL=100W,
IDS=1A, VGEN= 10V,
RG=25W
16
13
9
ns
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
12
2.8
4.1
15.6
VDS=160V, VGS= 10V,
IDS=1A
nC
Gate-Source Charge
Gate-Drain Charge
Notes: ①Current limited by maximum junction temperature.
②When mounted on 1 inch square copper board, t £10sec.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. B – JUL., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
