Electrical Characteristics (TC=25°C Unless Otherwise Noted)
RU2H15S
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
200
VDS=200V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
2
3
4
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
nA
±100
④
Drain-Source On-state Resistance VGS=10V, IDS=8A
200
250
mW
RDS(ON)
Diode Characteristics
④
Diode Forward Voltage
ISD=15A, VGS=0V
1.3
V
VSD
trr
Reverse Recovery Time
107
542
ns
ISD=15A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
5.6
670
115
40
Input Capacitance
VGS=0V,
VDS=100V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
10
VDD=100V, RL=6.7W,
IDS=15A, VGEN=10V,
RG=4.7W
26
ns
31
13
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
33
9
VDS=160V, VGS=10V,
IDS=15A
nC
Gate-Source Charge
Gate-Drain Charge
15
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =3A, VDD = 60V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2011
www.ruichips.com
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