Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU2560L
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
25
VDS= 25V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
1
2
3
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
nA
±100
④
VGS= 10V, IDS=30A
VGS= 4.5V, IDS=25A
8
12
20
mW
mW
RDS(ON)
Drain-Source On-state Resistance
12
Diode Characteristics
④
Diode Forward Voltage
ISD=30A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
24
16
ns
ISD=30A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.4
1080
195
165
12
Input Capacitance
VGS=0V,
VDS= 15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=15V, RL=15W,
IDS=30A, VGEN= 10V,
RG=6W
15
ns
33
16
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
18
2.7
8
25
VDS=15V, VGS= 10V,
IDS=30A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Current limited by
bond wire.
Limited by TJmax, IAS =22A, VDD = 20V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. B– FEB., 2012
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
