Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU20P4C
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=-250mA
-20
VDS=-20V, VGS=0V
-1
mA
TJ=85°C
-30
V
VDS=VGS, IDS=-250mA
-0.4
-0.7
-1.1
IGSS
Gate Leakage Current
VGS=±10V, VDS=0V
nA
±100
VGS=-4.5V, IDS=-4A
VGS=-2.5V, IDS=-3A
40
55
60
mW
mW
③
Drain-Source On-state Resistance
RDS(ON)
100
Diode Characteristics
③
Diode Forward Voltage
ISD=-1A, VGS=0V
-1
V
VSD
trr
Reverse Recovery Time
15
8
ns
ISD=-4A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
7.5
585
95
50
8
Input Capacitance
VGS=0V,
VDS=-10V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=-10V, RL=2.5W,
IDS=-4A, VGEN=-4.5V,
RG=6W
11
30
10
ns
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
9
13
VDS=-16V, VGS=-4.5V,
IDS=-4A
nC
Gate-Source Charge
Gate-Drain Charge
1.8
2.9
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t £10sec. The value in any given application depends on
the user's specific board design.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
