Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU2013H
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
20
VDS=20V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
0.5
0.8
1.5
IGSS
Gate Leakage Current
VGS=±12V, VDS=0V
nA
±100
VGS= 10V, IDS=10A
VGS= 4.5V, IDS=8A
VGS= 2.5V, IDS=6A
13
16
22
16
20
26
mW
mW
mW
③
Drain-Source On-state Resistance
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=1A, VGS=0V
1
V
VSD
trr
Reverse Recovery Time
9
ns
ISD=10A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
12
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.2
580
124
65
4
Input Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=10V, RL=1W,
IDS=10A, VGEN=10V,
RG=6W
11
19
8
ns
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
9
2.1
3
12
VDS=16V, VGS=4.5V,
IDS=10A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t £10sec.
③Pulse test ; Pulse width£300ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– AUG., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
