RU1HL13L
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
③
(T
C
=25°C Unless Otherwise Noted)
RU1HL13L
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=-250µA
V
DS
= -100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±16V, V
DS
=0V
V
GS
= -10V, I
DS
=-8A
V
GS
= -4.5V, I
DS
=-6A
-100
-1
-30
-1.5
-2
-2.7
±10
160
180
180
210
V
µA
V
µA
mΩ
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
③
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
④
I
SD
=-1A, V
GS
=0V
I
SD
=-13A, dl
SD
/dt=100A/µs
35
65
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= -50V,
Frequency=1.0MHz
1.8
1840
270
140
13
V
DD
=-50V, R
L
=3.8Ω,
I
DS
=-13A, V
GEN
=-10V,
R
G
=6Ω
16
31
18
-1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
④
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Pulse width limited by safe operating area.
Limited by T
Jmax
, I
AS
=15A, V
DD
=-48V, R
G
= 50Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
28
V
DS
=-80V, V
GS
= -10V,
I
DS
=-13A
9
10
nC
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– OCT., 2011
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
