Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU1HE4H
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
V
VGS=0V, IDS=250mA
100
VDS= 100V, VGS=0V
1
mA
TJ=85°C
30
V
VDS=VGS, IDS=250mA
1.5
2
2.7
IGSS
Gate Leakage Current
VGS=±20V, VDS=0V
mA
±10
VGS= 10V, IDS=3.5A
VGS= 4.5V, IDS=2A
72
80
75
85
mW
mW
③
Drain-Source On-state Resistance
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=3A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
42
73
ns
ISD=3A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
1.2
840
70
Input Capacitance
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
40
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
12
VDD=50V, RL=30W,
IDS=3A, VGEN= 10V,
RG=6W
39
ns
34
13
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
19
4
VDS=80V, VGS= 10V,
IDS=3A
nC
Gate-Source Charge
Gate-Drain Charge
9
Notes:
Pulse width limited by safe operating area.
②When mounted on 1 inch square copper board, t £10sec.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2011
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
