RU1H80R
Electrical Characteristics
Symbol
Static Characteristics
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
④
(T
A
=25°C Unless Otherwise Noted)
RU1H80R
Min.
Typ.
Max.
Parameter
Test Condition
Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state Resistance
V
GS
=0V, I
DS
=250µA
V
DS
= 100V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±25V, V
DS
=0V
V
GS
= 10V, I
DS
=40A
100
1
30
2
3
4
±100
9
12
V
µA
V
nA
mΩ
Diode Characteristics
V
SD
t
rr
Q
rr
④
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
⑤
I
SD
=40 A, V
GS
=0V
I
SD
=40A, dl
SD
/dt=100A/µs
52
97
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
= 30V,
Frequency=1.0MHz
1.7
3600
470
340
15
V
DD
=30V, R
L
=30Ω,
I
DS
=40A, V
GEN
= 10V,
R
G
=6Ω
18
42
64
1.2
V
ns
nC
Ω
pF
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
t
r
t
d(OFF)
t
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
⑤
ns
Gate Charge Characteristics
Q
g
Q
gs
Q
gd
Notes:
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=80V, V
GS
= 10V,
I
DS
=40A
78
15
27
103
nC
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A..
Limited by T
Jmax
, I
AS
=48A, V
DD
= 48V, R
G
= 47Ω , Starting T
J
= 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– NOV., 2010
2
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
