Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU1H35S
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
V
VGS=0V, IDS=250mA
100
VDS= 100V, VGS=0V
1
IDSS Zero Gate Voltage Drain Current
mA
TJ=85°C
10
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
V
VDS=VGS, IDS=250mA
2
3
4
VGS=±25V, VDS=0V
nA
±100
④
Drain-Source On-state Resistance VGS= 10V, IDS=16A
21
25
mW
RDS(ON)
Diode Characteristics
④
Diode Forward Voltage
ISD=16A, VGS=0V
0.8
1.2
V
VSD
trr
Reverse Recovery Time
100
430
ns
ISD=16A, dlSD/dt=100A/ms
Qrr
Reverse Recovery Charge
nC
⑤
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
W
2.8
2100
250
115
22
Input Capacitance
VGS=0V,
VDS= 25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
VDD=50V, RL=30W,
IDS=16A, VGEN= 10V,
RG=4.7W
76
ns
60
23
⑤
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
44
10
21
VDS=80V, VGS= 10V,
IDS=16A
nC
Gate-Source Charge
Gate-Drain Charge
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =21A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width£300ms, duty cycle£2%.
Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2011
www.ruichips.com
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