RU1H100
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU1H100
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
100
V
VGS=0V, IDS=250mA
VDS= 100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
mA
TJ=85°C
30
Gate Threshold Voltage
Gate Leakage Current
2
3
4
V
VGS(th)
VDS=VGS, IDS=250mA
IGSS
VGS=±25V, VDS=0V
±100
14
nA
③
Drain-Source On-state Resistance VGS= 10V, IDS=40A
11
mW
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=40A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
36
46
ns
nC
ISD=40A, dlSD/dt=100A/ms
qrr
Reverse Recovery Charge
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.5
3450
265
148
19
W
Input Capacitance
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
86
VDD=50V,IDS= 40A, VGEN=
10V,RG=5.6W
ns
55
69
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
85
20
35
135
VDS=80V, VGS= 10V,
IDS=40A
nC
Gate-Source Charge
Gate-Drain Charge
Notes: ①Current limited by package.
② Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C
③Pulse test ; Pulse width£400ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RUICHIPS [ RUICHIPS SEMICONDUCTOR CO., LTD ]
