SSO-AD-800-TO5i
Avalanche Photodiode
Special characteristics
High gain at low bias voltage
Fast rise time
800 µm diameter active area
low capacitance
Parameters:
active area
dark current
(M=100)
1)
Total capacitance
(M=100)
2)
Break down U
BR
(at I
D
=2µA)
Temperature coefficient of U
BR
Spectral responsivity
at 780 nm
Cut-off frequency
(-3dB)
Rise time
Optimum gain
Gain M
"Exess Noise" factor
(M=100)
"Exess Noise" index
(M=100)
Noise current
(M=100)
N.E.P.
(M=100, 880 nm)
Operating temperature
Storage temperature
1) measurement conditions:
1)
Package 3 (TO5i) :
0,5 mm
∅
800 µm
max. 6 nA
typ. 4 nA
typ.5 pF
100 - 220 V
typ. 0,4 %/°C
min. 0,40 A/W
typ. 0,45 A/W
typ. 0,5 GHz
typ. 700 ps
50 - 60
min 200
2
typ. 2,2
typ. 0,2
typ. 3 pA/Hz
�½
typ. 4 * 10 W/Hz
-20 ... +70°C
-60 ... +100°C
-14
�½
Setup of photo current 10nA at M=1 and irradiation by a
NIR-LED (880nm, 80nm bandwidth).
Rise of the photo current up to 1 µA, (M=100) by internal
multiplication due to an increasing bias voltage.
2) limited U
BR
range possible to agree
ROITHNER [ Roithner LaserTechnik GmbH ]
