ROITHNER LASERTECHNIK
SCHOENBRUNNER STRASSE 7, VIENNA, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com www.roithner-laser.com
RLT940-100GS
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing mode structure:
single mode
Lasing wavelength:
typ. 940 nm
Optical power:
100 mW
Package:
9 mm (SOT-148)
PIN CONNECTION:
1) Laser diode anode
2) Laser diode cathode and photodiode cathode
3) Photodiode anode
LASERDIODE
MUST BE COOLED!
NOTE!
Absolute Maximum Ratings (Tc = 25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
130
1.5
10
-20 .. +40
-40 .. +70
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Emitting Aperture
A
cw
Optical Output Power
P
o
single mode
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 100 mW
Forward Voltage
U
f
P
o
= 100 mW
Lasing Wavelength
P
o
= 100 mW
λ
p
Spectral Width
FWHM
P
o
= 100 mW
∆λ
Beam Divergence
P
o
= 100 mW
θ
//
Beam Divergence
P
o
= 100 mW
θ
⊥
Monitor Current
I
m
P
o
= 100 mW
MIN
20
140
1.5
930
100
TYP
1x5
100
25
150
1.6
940
0.2
25
40
500
MAX
30
160
1.7
945
0.3
1500
UNIT
µm²
mW
mA
mA
V
nm
nm
°
°
µA